photomultiplier tube R9110 high sensitivity and lower dark current wide spectral range with low eni, 8 mm 6 mm photocathode size figure 1: typical spectral response and equivalent noise input tpmsb0207ea wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) equivalent noise input (w) 300 100 200 0.001 0.01 0.1 10 1 100 10 -17 10 -16 10 -15 10 -13 10 -14 10 -12 400 500 600 700 800 900 1000 R9110 r3896 cathode radiant sensitivity quantum efficiency equivalent noise input information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?006 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. features the R9110 is a 28 mm (1-1/8 inch) diameter, 9-stage, side-on type photomultiplier tube having an extended red multialkali photocathode same as the r3896. the R9110 features very low dark current, ex- tremely high quantum efficiency, high gain, good s/n ratio and wide spectral response from uv to near infrared. the R9110 is directly pin compatible with the r3896. low dark current ...................................... 5 na (after 30 minutes) wide spectral response .......................... 185 nm to 900 nm high cathode sensitivity luminous ................................................ 525 a/lm radiant at 450 nm .................................. 90 ma/w qe at 450 nm .......................................... 24.8 % high anode sensitivity (at 1000 v) luminous ................................................ 10 000 a/lm high signal to noise ratio general parameter description/value unit spectral response peak wavelength photocathode window material dynode direct interelectrode capacitances base weight operating ambient temperature storage temperature suitable socket suitable socket assembly nm nm mm pf pf g c c 185 to 900 450 multialkali 8 6 uv glass multialkali circular-cage 9 approx. 4 approx. 6 11-pin base jedec no. b11-88 approx. 46 -30 to +50 -30 to +50 e678-11a (sold separately) e717-63 (sold separately) e717-74 (sold separately) material minimum effective area secondary emitting surface structure number of stages anode to last dynode anode to all other electrodes
photomultiplier tube R9110 notes a: b: c: d: e: averaged over any interval of 30 seconds maximum. the light source is a tungsten filament lamp operated at a distribution temperature of 2856k. supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. red/white ratio is the quotient of the cathode current measured using a red filter(toshiba r-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as note b. the value is cathode output current when a blue filter(corning cs 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as note b. measured with the same light source as note b and with the voltage distribution ratio shown in table 1 below. electrodes k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p distribution ratio 1 111111111 suppiy voltage: 1000 v, k: cathode, dy: dynode, p: anode table 1:voltage distribution ratio f: g: h: i: j: measured with the same supply voltage and voltage distribution ratio as note e after removal of light. the rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. the electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. in measurement, the whole photocathode is illuminated. also called transit time jitter. this is the fluctuation in electron transit time between individual pulses in the single photoelectron mode, and may be defined as the fwhm of the frequency distribution of electron transit times hysteresis is temporary instability in anode current after light and voltage are applied. (1)light hysteresis the tube is operated at 750 volts with an anode current of 1 microampere for 5 minutes. the light is then removed from the tube for a minute. the tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)voltage hysteresis the tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. the light is then removed from the tube and the supply voltage is quickly increased to 800 volts. after a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. hysteresis = 100 (%) l max. l i l min. tpmsb0002ea time max. l min. l i l anode current 0 5 6 7 (minutes) maximum ratings (absolute maximum values at 25 c) characteristlcs (at 25 c) value 1250 250 0.1 v v ma unit parameter supply voltage average anode current a typ. max. unit 15 % % % % a/lm ma/w ma/w ma/w ma/w a/lm na ns ns ns % % 29.3 24.8 14.3 0.73 525 60 90 73 5.0 0.4 15 10 000 1.9 10 7 5 2.2 22 1.2 0.1 1.0 min. quantum efficiency luminous b radiant red/white ratio c blue sensitivity index d luminous e anode pulse rise time g electron transit time h transit time spread (tts) i light hysteresis voltage hysteresis at 254 nm at 450 nm at 633 nm at 852 nm at 254 nm at 450 nm at 633 nm at 852 nm 400 4000 parameter cathode sensitivity anode sensitivity gain e anode dark current f (after 30 min storage in darkness) time response anode current stability j between anode and cathode between anode and last dynode
voltage distribution ratio figure 2: anode luminous sensitivity and gain characteristics tpmsb0206eb tpmsb0157eb figure 3: typical time response k: cathode, dy: dynode, p: anode electrodes distribution ratio k dy1 1 dy2 1 dy3 1 dy4 1 dy5 1 dy6 1 dy7 11 dy8 dy9 p 11 note: for a high speed pulse measurement, below voltage divider ratio is recommended. 100 80 60 40 20 10 8 6 4 2 1 500 700 1000 1500 supply voltage (v) time (ns) transit time rise time 10 4 10 5 10 3 10 2 10 1 10 0 10 -1 10 7 10 8 10 6 10 5 10 4 10 3 10 2 500 700 1000 1500 supply voltage (v) anode luminous sensitivity (a/lm) gain typical gain minimum anode sensitivity typical anode sensitivity electrodes distribution ratio k dy1 1 dy2 1 dy3 1 dy4 1 dy5 1 dy6 1 dy7 11 dy8 dy9 p 21
photomultiplier tube R9110 tpms1072e02 jul. 2006. ip figure 4: dimensional outline and basing diagram (unit: mm) tpmsa0016ec 1 2 4 3 5 7 6 8 9 10 k dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 p direction of light 11 29.0 1.7 8 min. photocathode 6 min. 49 1 80 max. 94 max. insulation cover 32.2 0.5 11 pin base jedec no. b11-88 figure 6: d type socket assembly (unit: mm) figure 5: socket (unit: mm) sold separately sold separately warning?ersonal safety hazards electrical shock operating voltages applied to this device present a shock hazard. tacca0002eh tacca0277ea tacca0064ea 33 5 49 3.5 38 29 4 18 * hamamatsu also provides c4900 series compact high voltage power supplies and c6270 series dp type socket assemblies which incor- porate a dc to dc converter type high voltage power supply. potting compound r1 to r10 c1 to c3 : 330 k ? : 10 nf 3.5 33.0 0.3 49.0 0.3 29.0 0.3 38.0 0.3 4 0.7 30.0 450 10 5 31.0 0.5 housing (insulator) r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal gnd signal output rg-174/u(black) -hv awg22 (violet) p k 10 power supply gnd awg22 (black) socket pin no. pmt 9 8 7 6 5 4 3 2 1 11 +0 -1 e717-63 e717-74 e678-11a r1 to r10 c1 to c3 : 330 k ? : 10 nf r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 c3 c2 c1 signal output (a) -hv (k) p k 10 gnd (g) socket pin no. 9 8 7 6 5 4 3 2 1 11 * "wiring diagram applies when -hv is supplied." to supply +hv,connect the pin "g" to+hv, and the pin "k" to the gnd. pmt 26.0 0.2 22.4 0.2 32.0 0.5 26.0 0.2 32.0 0.5 2 7 2.7 14.0 0.5 30 10 0.7 4- 2.8 housing (insulator) r13 k a g top view side view bottom view hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it web site www.hamamatsu.com
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